maximum ratings (t a =25c) symbol units drain-source voltage v ds 60 v drain-gate voltage v dg 60 v gate-source voltage v gs 40 v continuous drain current i d 280 ma continuous source current (body diode) i s 280 ma maximum pulsed drain current i dm 1.5 a maximum pulsed source current i sm 1.5 a power dissipation p d 350 mw (note 1) power dissipation p d 300 mw (note 2) power dissipation p d 150 mw (note 3) operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per transistor (t a =25c unless otherwise noted) symbol test conditions min max units i gssf v gs =20v, v ds =0v 100 na i gssr v gs =20v, v ds =0v 100 na i dss v ds =60v, v gs =0v 1.0 a i dss v ds =60v, v gs =0v, t j =125c 500 a i d(on) v gs =10v, v ds 2v ds(on) 500 ma bv dss v gs =0v, i d =10a 60 v v gs(th) v ds =v gs , i d =250a 1.0 2.5 v v ds(on) v gs =10v, i d =500ma 1.0 v v ds(on) v gs =5.0v, i d =50ma 0.15 v r ds(on) v gs =10v, i d =500ma 2.0 ? r ds(on) v gs =10v, i d =500ma, t j =125c 3.5 ? r ds(on) v gs =5.0v, i d =50ma 3.0 ? r ds(on) v gs =5.0v, i d =50ma, t j =125c 5.0 ? g fs v ds 2v ds(on) , i d =200ma 80 mmhos CMLDM7002A CMLDM7002Aj surface mount picomini tm dual n-channel enhancement-mode silicon mosfet sot-563 case central semiconductor corp. tm r3 (19-december 2003) description: the central semiconductor CMLDM7002A and CMLDM7002Aj are special dual versions of the 2n7002 enhancement-mode n-channel field effect transistor, manufactured by the n-channel dmos process, designed for high speed pulsed amplifier and driver applications. the CMLDM7002A utilizes the usa pinout configuration, while the CMLDM7002Aj utilizes the japanese pinout configuration. these special dual transistor devices offer low r ds(on) and low v ds (on). marking code: CMLDM7002A: l02 CMLDM7002Aj: 02j notes: (1) ceramic or aluminum core pc board with copper mounting pad area of 4.0 mm 2 (2) fr-4 epoxy pc board with copper mounting pad area of 4.0 mm 2 (3) fr-4 epoxy pc board with copper mounting pad area of 1.4 mm 2
a b c h g f d e e r0 12 3 65 4 central semiconductor corp. tm sot-563 case - mechanical outline CMLDM7002A CMLDM7002Aj surface mount picomini tm dual n-channel enhancement-mode silicon mosfet r3 (19-december 2003) lead code: 1) gate q1 2) source q1 3) drain q2 4) gate q2 5) source q2 6) drain q1 marking code: l02 lead code: 1) source q1 2) gate q1 3) drain q2 4) source q2 5) gate q2 6) drain q1 marking code: 02j CMLDM7002A (usa pinout) CMLDM7002Aj (japanese pinout) electrical characteristics per transistor - continued (t a =25c unless otherwise noted) symbol test conditions min max units c rss v ds =25v, v gs =0, f=1.0mhz 5.0 pf c iss v ds =25v, v gs =0, f=1.0mhz 50 pf c oss v ds =25v, v gs =0, f=1.0mhz 25 pf t on v dd =30v, v gs =10v, i d =200ma, 20 ns t off r g =25 ? , r l =150 ? 20 ns v sd v gs =0v, i s =400ma 1.2 v
|
